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AO9926B 20V 7.6A Dual N-Channel MOSFET SOIC-8

AO9926B 20V 7.6A Dual N-Channel MOSFET SOIC-8
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The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

This device is suitable for use as a unidirectional or bi-directional load switch.

FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
7.6A
Rds On (Max) @ Id, Vgs
23mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
630pF @ 15V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
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AO9926B 20V 7.6A Dual N-Channel MOSFET SOIC-8
  • Heliopolis Branch : 22
  • Stock: 22
  • Brand: Chinese
  • Model: AO9926B
  • Weight: 0.00kg
  • Location: O4-3
Product Views: 66
15.00EGP
Tags: ao9926b , 20v , 7 , 6a , dual , n-channel , mosfet , soic-8 , irf540n