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N- P- MOSFET Transistors

N- P- MOSFET Transistors

The metal–oxide–semiconductor field-effect transistor (MOSFETMOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals.

Circuit symbols

A variety of symbols are used for the MOSFET. The basic design is generally a line for the channel with the source and drain leaving it at right angles and then bending back at right angles into the same direction as the channel. Sometimes three line segments are used for enhancement mode and a solid line for depletion mode. (see Depletion and enhancement modes) Another line is drawn parallel to the channel for the gate.

 

JFET P-Channel Labelled.svg IGFET P-Ch Enh Labelled.svg IGFET P-Ch Enh Labelled simplified.svg Mosfet P-Ch Sedra.svg IGFET P-Ch Dep Labelled.svg P-channel
JFET N-Channel Labelled.svg IGFET N-Ch Enh Labelled.svg IGFET N-Ch Enh Labelled simplified.svg Mosfet N-Ch Sedra.svg IGFET N-Ch Dep Labelled.svg N-channel
JFET MOSFET enh MOSFET enh (no bulk) MOSFET dep
 
Model: IRF540N
N channel Mosfet  General Purpose Power DrivingTransistor TO-220 Metal Case Datasheet..
5.50LE
Model: IRF9540N
P channel Mosfet  General Purpose Power DrivingTransistor TO-220 Metal Case Datasheet..
6.00LE
Model: IRFB20N50K
Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density 26A /500V please check the datasheet Here..
20.00LE
Model: IXTP62N15P
N-Channel Enhancement Mode Avalanche Rated transistor datasheet..
35.00LE
Model: IXTQ26N50P
Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density 26A /500V please check the datasheet Here..
20.00LE
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