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IGBT Toshiba MG200Q2YS40 200A 1200V

IGBT Toshiba MG200Q2YS40 200A 1200V

IGBT Toshiba MG200Q2YS40

APPLICATIONS

- HIGH POWER SWITCHING APPLICATIONS.

- MOTOR CONTROL APPLICATIONS.

This Toshiba IGBT MG200Q2YS40 Module Has the following characteristics

  • High  Input Impedance
  • High Speed     tf=0.5µs (Max.)   trr=0.5µs (Max.)
  •  Low Saturation Voltage    VCE (sat) = 4.0V (Max.)
  • Enhancement-Mode
  • Includes a Complete Half Bridge in One Package.
  • The Electrodes are Isolated from Case.

- Weight: 430g


 IGBT MG200Q2YS40 Module ELECTRICAL CHARACTERISTICS at 25 degrees

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Emitter Voltage

VcES

1200

V

Gate-Emitter Voltage

VGES

±20

V

 

Collector Current

DC

Ic

200

 

A

lms

Icp

400

Forward Current

DC

IF

200

 

A

lms

IFM

400

Collector Power Dissipation (Tc= 25°C)

Pc

1300

w

Junction Temperature

Tj

150

oc

Storage Temperature Range

Tstg

-40-125

oc

Isolation Voltage

V1sol

2500 (AC 1 minute)

V

Screw Torque (Terminal/ Mounting)

-

3/3

N·m


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IGBT Toshiba MG200Q2YS40 200A 1200V
  • Heliopolis Branch : 1
  • Stock: 1
  • Brand: Toshiba
  • Model: MG200Q2YS40
  • Weight: 430.00g
  • UPC: OK
  • Location: M3-15
Product Views: 3217
4,250.00EGP