IGBT Toshiba MG200Q2YS40 200A 1200V
IGBT Toshiba MG200Q2YS40
APPLICATIONS
- HIGH POWER SWITCHING APPLICATIONS.
- MOTOR CONTROL APPLICATIONS.
This Toshiba IGBT MG200Q2YS40 Module Has the following characteristics
- High Input Impedance
- High Speed tf=0.5µs (Max.) trr=0.5µs (Max.)
- Low Saturation Voltage VCE (sat) = 4.0V (Max.)
- Enhancement-Mode
- Includes a Complete Half Bridge in One Package.
- The Electrodes are Isolated from Case.
- Weight: 430g
IGBT MG200Q2YS40 Module ELECTRICAL CHARACTERISTICS at 25 degrees
CHARACTERISTIC | SYMBOL | RATING | UNIT | |
Collector-Emitter Voltage | VcES | 1200 | V | |
Gate-Emitter Voltage | VGES | ±20 | V | |
Collector
Current | DC | Ic | 200 |
A |
lms | Icp | 400 | ||
Forward
Current | DC | IF | 200 |
A |
lms | IFM | 400 | ||
Collector Power Dissipation
(Tc= 25°C) | Pc | 1300 | w | |
Junction Temperature | Tj | 150 | oc | |
Storage Temperature Range | Tstg | -40-125 | oc | |
Isolation Voltage | V1sol | 2500
(AC 1 minute) | V | |
Screw Torque (Terminal/
Mounting) | - | 3/3 | N·m | |
IGBT Toshiba MG200Q2YS40 200A 1200V
- Heliopolis Branch : 1
- Stock: 1
- Brand: Toshiba
- Model: MG200Q2YS40
- Weight: 430.00g
- UPC: 1837
- Location: M3-15
Product Views: 3424
4,250.00EGP
