IGBT Toshiba MG200Q2YS40 200A 1200V

SKU: A3-15-2
In Stock
EGP 4,250.000 exc. vat
In Stock

Brand:Toshiba
SKU: A3-15-2 Categories: , Tags: , ,

Description

IGBT Toshiba MG200Q2YS40

APPLICATIONS

– HIGH POWER SWITCHING APPLICATIONS.

– MOTOR CONTROL APPLICATIONS.

This Toshiba IGBT MG200Q2YS40 Module Has the following characteristics

  • High  Input Impedance
  • High Speed     tf=0.5µs (Max.)   trr=0.5µs (Max.)
  •  Low Saturation Voltage    VCE (sat) = 4.0V (Max.)
  • Enhancement-Mode
  • Includes a Complete Half Bridge in One Package.
  • The Electrodes are Isolated from Case.

– Weight: 430g

 IGBT MG200Q2YS40 Module ELECTRICAL CHARACTERISTICS at 25 degrees

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Emitter Voltage

VcES

1200

V

Gate-Emitter Voltage

VGES

±20

V

 

Collector Current

DC

Ic

200

 

A

lms

Icp

400

Forward Current

DC

IF

200

 

A

lms

IFM

400

Collector Power Dissipation (Tc= 25°C)

Pc

1300

w

Junction Temperature

Tj

150

oc

Storage Temperature Range

Tstg

-40-125

oc

Isolation Voltage

V1sol

2500 (AC 1 minute)

V

Screw Torque (Terminal/ Mounting)

3/3

N·m

Additional information

Weight 430 kg

Brand

Toshiba

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If your return is approved, we will initiate a refund to your credit card (or original method of payment). You will receive the credit within a certain amount of days, depending on your card issuer’s policies.

 

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