Description
IRFB18N50K – High-Voltage N-Channel MOSFET (500 V / 17 A / TO-220)
Key Features
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Type: N-Channel Power MOSFET.
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Drain-Source Voltage (V<sub>DS</sub>): 500 V maximum.
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Continuous Drain Current (I<sub>D</sub>): 17 A (at T<sub>C</sub> = 25 °C, V<sub>GS</sub> = 10 V).
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On-Resistance (R<sub>DS(on)</sub>): 0.26 Ω (typical, at V<sub>GS</sub>=10 V); ~0.29 Ω (max specified) under typical conditions.
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Maximum Power Dissipation (P<sub>D</sub>): ~220 W (case-mounted, good heatsinking).
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Gate-Source Voltage (V<sub>GS</sub>): ±30 V max.
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Total Gate Charge (Q<sub>G</sub>): ~120 nC (at V<sub>GS</sub> = 10 V) — relatively modest gate-drive requirement.
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Input Capacitance (C<sub>iss</sub>): ~2830 pF (at V<sub>DS</sub> = 25 V) — helps characterize switching behavior.
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Package: TO-220AB through-hole 3-pin + tab.
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Operating/Storage Temperature Range: –55 °C … +150 °C junction temperature.
⚙️ Other Characteristics & Suitability
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Low gate charge — helps simplify gate drive circuit (less current needed to switch).
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Good avalanche ruggedness and dynamic dV/dt tolerance, useful for switching inductive loads (motors, transformers, relays).
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Capable of pulsed operation — suitable for switching, SMPS, or power-control applications.
📦 Typical Applications
IRFB18N50K is well-suited for:
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High-voltage power supplies (AC-DC, SMPS)
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Motor drivers / controllers (especially for high-voltage DC motors, solenoids)
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Inverters, UPS, battery-powered high-voltage devices
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Inductive load switching (relays, coils, transformers)
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General-purpose switching where 500 V rating + decent current & power dissipation needed
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