Description
Overview
The 2SC3356 is a high-frequency NPN silicon epitaxial transistor designed for low-noise amplification in VHF, UHF, microwave, and CATV applications. It combines low noise, high gain, and a high transition frequency, making it suitable for RF front-end and signal amplification circuits.
The device can achieve a typical 1.1 dB noise figure and 11 dB associated gain at 1 GHz under the specified test conditions.
Key Features
- NPN silicon RF transistor
- Designed for VHF, UHF, microwave, and CATV applications
- Low noise figure
- High RF gain
- High transition frequency
- Wide dynamic range
- Suitable for low-noise amplifier (LNA) circuits
- Compact SOT-23 SMD package
- 100 mA maximum collector current
- 12 V maximum collector-emitter voltage
Technical Specifications
Electrical Characteristics
| Parameter |
Specification |
| Part Number |
2SC3356 |
| Device Type |
NPN Silicon RF Transistor |
| Application |
VHF / UHF / Microwave / CATV |
| Package |
SOT-23 |
| Collector-Emitter Voltage (VCEO) |
12 V max. |
| Collector-Base Voltage (VCBO) |
20 V max. |
| Emitter-Base Voltage (VEBO) |
3 V max. |
| Collector Current (IC) |
100 mA max. |
| Power Dissipation |
200 mW |
| Junction Temperature |
150°C max. |
| Transition Frequency (fT) |
7 GHz typ. |
| Noise Figure |
1.1 dB typ. @ 1 GHz |
| Associated Gain (Ga) |
11 dB typ. @ 1 GHz |
| Maximum Available Gain (MAG) |
13 dB typ. @ 1 GHz |
| Feedback Capacitance (Cre) |
0.55 pF typ. |
The 1.1 dB noise figure and 11 dB associated gain are specified at VCE = 10 V, IC = 7 mA, f = 1 GHz. The 13 dB MAG specification is at VCE = 10 V, IC = 20 mA, f = 1 GHz.
Absolute Maximum Ratings
| Parameter |
Maximum |
| VCEO |
12 V |
| VCBO |
20 V |
| VEBO |
3 V |
| Collector Current |
100 mA |
| Power Dissipation |
200 mW |
| Junction Temperature |
150°C |
| Storage Temperature |
−65°C to +150°C |
Pin Configuration
For the SOT-23 version:
| Pin |
Function |
| 1 |
Emitter |
| 2 |
Base |
| 3 |
Collector |
Power & Programming
- No programming required.
- Requires appropriate external RF biasing and matching circuitry.
- The transistor is intended for operation in RF amplifier circuits rather than as a general-purpose low-frequency switching transistor.
- RF PCB layout and impedance matching are important for achieving the specified high-frequency performance.
Applications
- VHF amplifiers
- UHF amplifiers
- Low-noise amplifiers (LNA)
- RF receiver front ends
- CATV amplifiers
- Microwave circuits
- RF signal amplification
- Wireless communication equipment
- RF test and measurement equipment
What’s Included
- 1 × 2SC3356 NPN RF Transistor
- Package: SOT-23, SMD
Notes
- This device is not a power transistor; the maximum power dissipation is only 200 mW for the Renesas/NEC specification.
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