3DU5C Metal Encapsulated Silicon Phototransistor 0.5-1mA 880nM 10V

Name: 3DU5C Metal Encapsulated Silicon Phototransistor 0.5-1mA 880nM 10V
SKU: D22-24
Price: 11.400 EGP
Availability: OutOfStock

Model: 3DU5C

SKU: D22-24

Out of stock

EGP 11.400

Out of stock

Description

Product Name : NPN Silicon Phototransistor;Model : 3DU5C
Working Voltage(Max.) : 10V;Reverse Breakdown Voltage : 15V;Dark Current : 0.3uA
Photocurrent : 0.5-1mA;Power Consumption : 30mW;Peak Wavelength : 880nM
Body Size : 7 x 5mm/ 0.28″ x 0.2″(L*D);Total Length : 28mm/ 1.1″;External Material : Metal
Weight : 3g;Package Content : 1 x NPN SiliconPhototransistor

Widely used in all kinds of electric circuits.
In unlicensed shot is, by light activated triode, no electrical signal output.
When the signal light illuminate its base (window) by light, the light activated triode conduction, from the emitter or collector output electrical signal after amplification.

Weight	0.03 kg

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3DU5C Metal Encapsulated Silicon Phototransistor 0.5-1mA 880nM 10V EGP 11.400

Out of stock