Description
HGN036N08S SMD 80V 130A N Channel Mosfet DFN5X6
Description
The HGN036N08S is a high-performance N-channel enhancement-mode MOSFET optimized for low R<sub>DS(on)</sub> and high current handling. With a drain-source voltage rating of 80V and a continuous drain current of up to 120A, it is suitable for motor drivers, DC-DC converters, battery management systems, and power switching circuits. Its low gate charge and fast switching characteristics make it highly efficient in high-frequency applications.
Specifications
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Type: N-Channel Power MOSFET
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Package: TO-263 / D²PAK (SMD)
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Drain-Source Voltage (V<sub>DSS</sub>): 80 V
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Continuous Drain Current (I<sub>D</sub>): 120 A (T<sub>C</sub> = 25 °C)
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Pulsed Drain Current (I<sub>DM</sub>): 360 A
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Gate-Source Voltage (V<sub>GS</sub>): ±20 V
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R<sub>DS(on)</sub> (max): 3.6 mΩ (at V<sub>GS</sub> = 10 V, I<sub>D</sub> = 60 A)
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Total Gate Charge (Q<sub>g</sub>): ~120 nC (typical)
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Power Dissipation (P<sub>D</sub>): 250 W (T<sub>C</sub> = 25 °C)
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Junction Temperature (T<sub>j</sub>): −55 °C to +150 °C
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Thermal Resistance (R<sub>θJC</sub>): 0.5 °C/W
Key Features
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Very low R<sub>DS(on)</sub> for high efficiency
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High current handling (120A continuous, 360A pulsed)
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Rugged and reliable for motor control and automotive use
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±20V gate voltage tolerance
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Suitable for high-frequency switching applications
Applications
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Motor drivers (BLDC, brushed DC motors)
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DC-DC converters and power supplies
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Battery management and power distribution
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Inverters and synchronous rectification
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Automotive and industrial power control
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