IR2011 High and Low Side Mosfet Driver DIP8

SKU: D20-1-1
In Stock
EGP 75.000 exc. vat
In Stock

Brand:Chinese

Description

IR2011 High and Low Side Mosfet Driver DIP8

Description The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features :

 Floating channel designed for bootstrap operation

 Fully operational to 200V

 Tolerant to negative transient voltage, dV/dt immune

 Gate drive supply range from 10 to 20V

 Independent low and high side channels

 Input logic HIN/LIN active high

 Undervoltage lockout for both channels

 3.3V and 5V logic compatible

 CMOS Schmitt-triggered inputs with pull-down

 Matched propagation delay for both channels

Datasheet

Additional information

Weight0.002 kg

Brand

Chinese

Chinese
Chinese

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IR2011 High and Low Side Mosfet Driver DIP8 EGP 75.000 exc. vat
In Stock