IRFB4110PBF

Description

Specifications:

• Type: N-Channel MOSFET
• Drain-Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 180A at 25°C
• Pulsed Drain Current (Id, pulse): 720A
• Gate Threshold Voltage (Vgs(th)): 2.0V to 4.0V
• Rds(on) (Max): 3.7mΩ at Vgs = 10V
• Total Gate Charge (Qg): 140nC at Vgs = 10V
• Gate-Source Voltage (Vgs): ±20V
• Power Dissipation (Pd): 370W
• Package: TO-220AB
• Operating Temperature: -55°C to +175°C
• Datasheet

Applications:

• High-efficiency power supplies
• DC-DC converters
• Motor control
• Automotive applications