IRGPS60B120KD 60A 1200V UltraFast IGBT Transistor TO-247

Description

IRGPS60B120KD 60A 1200V UltraFast IGBT Transistor TO-247

Product Description

The IRGPS60B120KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It is engineered for switching applications that require both high voltage handling and fast switching characteristics. It uses a “non-punch-through” IGBT technology to reduce switching losses and supports operation in demanding power electronics systems (e.g. motor drives, inverters, SMPS).

Key Features & Specifications

• Collector-to-Emitter Voltage, V₍CES₎: 1200 V

• Continuous Collector Current, IC: 60 A at case temperature (TC) = 100 °C (higher values at lower TC)

• Pulsed Collector Current, ICM: up to 240 A

• Diode continuous forward current (IF): 120 A (TC = 25 °C)

• Diode pulsed forward current (IFM): 240 A

• Gate-Emitter Voltage, VGE: ± 20 V (absolute maximum)

• Collector-Emitter Saturation Voltage, VCE(sat): ~ 2.50 V (typical) at IC = 60 A, VGE = 15 V

• Gate threshold, VGE(th): ~4.0 – 6.0 V (at IC = 250 µA)

• Power Dissipation, PD:
    • 595 W (TC = 25 °C)
    • 238 W (TC = 100 °C)

• Thermal Resistance, θJC (junction-to-case): ~ 0.20 °C/W (IGBT) / ~ 0.41 °C/W (diode)

• Switching characteristics:
    • Total gate charge, Qg: ~ 340 nC
    • Turn-on switching loss, Eon: ~ 3214 – 4870 µJ (typ)
    • Turn-off switching loss, Eoff: ~ 4783 – 5450 µJ
    • Turn-on delay td(on): ~ 72 – 94 ns
    • Turn-off delay td(off): ~ 366 – 400 ns
    • Rise time, tr: ~ 32 – 45 ns
    • Fall time, tf: ~ 45 – 58 ns

• Input / output capacitances:
    • Cies (input capacitance) ~ 4300 pF
    • Coes (output capacitance) ~ 395 pF
  

• Diode parameters:
    • Forward voltage, VF: ~ 1.82 – 2.10 V at IF = 50 A
    • Reverse recovery time trr: ~ 180 ns
    • Recovery charge Qrr: … (typical)
    • Peak reverse recovery current, Irr: ~ 50 A

• Safe-Operating-Area and short-circuit protection: 10 µs short-circuit capability

• Operating junction temperature, TJ: –55 °C to +150 °C

• Storage temperature, TSTG: –55 °C to +150 °C

• Package: Super-247 / TO-274AA with optimized thermal conduction and mounting

• Lead-Free / RoHS compliant