IRLR3410 15A 100V TO252 N Channel MOSFET

Description

IRLR3410 — N-Channel Power MOSFET (100 V / ~17 A / D-PAK)

Key Features & Ratings

• Type: N-channel enhancement-mode power MOSFET (HEXFET / TrenchFET).

• Drain-Source Voltage (V_DS): 100 V maximum.

• Gate-Source Voltage (V_GS): ±16 V (max) per datasheet absolute max.

• Continuous Drain Current (I_D): up to 17 A (at 25 °C, in D-PAK package)

• Drain-Source On-Resistance (R_DS(on)):

  • ≤ 0.105 Ω typical (at V_GS = 10 V)

  • ≤ 0.155 Ω max (at V_GS = 4.5 V)

• Total Power Dissipation (P_D): ~79 W (when properly heat-sunk, per datasheet)

• Gate Charge (Q_G): ~22.7 nC (at V_GS ~4.5–10 V)

• Mounting / Package: D-PAK (surface-mount, TO-252 / TO-252-3 / DPAK package)

• Operating Junction Temperature: –55 °C to +175 °C (T_j max)

• Special Features: Fully avalanche-rated, rugged HEXFET structure, suitable for switching applications, general-purpose MOSFET usage.

⚙️ Typical Applications

IRLR3410 is well-suited for:

• DC/DC converters, switching regulators, power supplies.

• Load switching, power switching, MOSFET-based relays or power management.

• Motor drivers (DC motors, brushless control), solenoids, inductive or resistive loads.

• General-purpose high-voltage (up to 100 V) switching in compact SMT designs.

• Applications requiring moderate current (few to ~15 A) with reliable switching and reasonable on-resistance.