TPH1R403NL N-Channel MOS MOSFET 30V 150A DFN5x6
EGP 55.000
Out of stock
Description
TPH1R403NL N-Channel MOS MOSFET 30V 150A DFN5x6
Key Specifications
1. Basic Parameters
- Type: N-Channel Enhancement Mode MOSFET
- Package: DFN5x6 (Dual Flat No-Lead, 5x6mm)
- Polarity: Single N-Channel
2. Voltage & Current Ratings
- Drain-Source Voltage (V<sub>DS</sub>): 30V
- Continuous Drain Current (I<sub>D</sub>):
- 150A @ T<sub>C</sub>=25°C
- 100A @ T<sub>C</sub>=100°C
- Pulsed Drain Current (I<sub>DM</sub>): 300A
3. On-Resistance
- R<sub>DS(on)</sub> (max):
- 1.3mΩ @ V<sub>GS</sub>=10V
- 1.6mΩ @ V<sub>GS</sub>=4.5V
4. Gate Characteristics
- Gate-Source Voltage (V<sub>GS</sub>): ±20V
- Gate Threshold Voltage (V<sub>GS(th)</sub>): 1.0V to 2.5V
- Total Gate Charge (Q<sub>g</sub>): 60nC (typical)
- Input Capacitance (C<sub>iss</sub>): 5500pF
5. Switching Performance
- Turn-On Delay Time (t<sub>d(on)</sub>): 10ns
- Turn-Off Delay Time (t<sub>d(off)</sub>): 35ns
- Rise Time (t<sub>r</sub>): 15ns
- Fall Time (t<sub>f</sub>): 10ns
6. Thermal Characteristics
- Junction-to-Ambient (R<sub>θJA</sub>): 40°C/W
- Junction-to-Case (R<sub>θJC</sub>): 0.5°C/W
- Operating Junction Temp (T<sub>J</sub>): -55°C to +175°C
7. Protection Features
- Avalanche Energy (E<sub>AS</sub>): 200mJ
- Body Diode Forward Voltage: 0.85V @ 75A
8. Applications
- High-current DC-DC converters
- Motor drive circuits
- Power tools
- Battery management systems
- Server/telecom power supplies
9. Pin Configuration (DFN5x6)
- Gate (G)
- Drain (D) – Center pad
- Source (S) – Multiple pins
10. Manufacturer Info
- Manufacturer: TSC (Taiwan Semiconductor)
- Alternative Parts:
- Infineon BSC014N03LS
- Vishay SiR156DP
Key Advantages
- Ultra-low R<sub>DS(on)</sub> for minimal conduction losses
- High current capability in compact package
- Excellent thermal performance with exposed pad
- Fast switching for high-frequency applications
Design Considerations
- Requires proper PCB thermal design (use large copper area)
- Gate driver should provide sufficient current (>2A)
- Decoupling capacitors needed near device
- ESD protection recommended for gate
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