TPH1R403NL N-Channel MOS MOSFET 30V 150A DFN5x6

Model: TPH1R403NL
SKU: D6-17-TPH1R403NL
Out of stock
EGP 55.000
Out of stock
SKU: D6-17-TPH1R403NL Categories: ,

TPH1R403NL N-Channel MOS MOSFET 30V 150A DFN5x6

Description

TPH1R403NL N-Channel MOS MOSFET 30V 150A DFN5x6

Key Specifications

1. Basic Parameters

  • Type: N-Channel Enhancement Mode MOSFET
  • Package: DFN5x6 (Dual Flat No-Lead, 5x6mm)
  • Polarity: Single N-Channel

2. Voltage & Current Ratings

  • Drain-Source Voltage (V<sub>DS</sub>): 30V
  • Continuous Drain Current (I<sub>D</sub>):
    • 150A @ T<sub>C</sub>=25°C
    • 100A @ T<sub>C</sub>=100°C
  • Pulsed Drain Current (I<sub>DM</sub>): 300A

3. On-Resistance

  • R<sub>DS(on)</sub> (max):
    • 1.3mΩ @ V<sub>GS</sub>=10V
    • 1.6mΩ @ V<sub>GS</sub>=4.5V

4. Gate Characteristics

  • Gate-Source Voltage (V<sub>GS</sub>): ±20V
  • Gate Threshold Voltage (V<sub>GS(th)</sub>): 1.0V to 2.5V
  • Total Gate Charge (Q<sub>g</sub>): 60nC (typical)
  • Input Capacitance (C<sub>iss</sub>): 5500pF

5. Switching Performance

  • Turn-On Delay Time (t<sub>d(on)</sub>): 10ns
  • Turn-Off Delay Time (t<sub>d(off)</sub>): 35ns
  • Rise Time (t<sub>r</sub>): 15ns
  • Fall Time (t<sub>f</sub>): 10ns

6. Thermal Characteristics

  • Junction-to-Ambient (R<sub>θJA</sub>): 40°C/W
  • Junction-to-Case (R<sub>θJC</sub>): 0.5°C/W
  • Operating Junction Temp (T<sub>J</sub>): -55°C to +175°C

7. Protection Features

  • Avalanche Energy (E<sub>AS</sub>): 200mJ
  • Body Diode Forward Voltage: 0.85V @ 75A

8. Applications

  • High-current DC-DC converters
  • Motor drive circuits
  • Power tools
  • Battery management systems
  • Server/telecom power supplies

9. Pin Configuration (DFN5x6)

  1. Gate (G)
  2. Drain (D) – Center pad
  3. Source (S) – Multiple pins

10. Manufacturer Info

  • Manufacturer: TSC (Taiwan Semiconductor)
  • Alternative Parts:
    • Infineon BSC014N03LS
    • Vishay SiR156DP

Key Advantages

  • Ultra-low R<sub>DS(on)</sub> for minimal conduction losses
  • High current capability in compact package
  • Excellent thermal performance with exposed pad
  • Fast switching for high-frequency applications

Design Considerations

  1. Requires proper PCB thermal design (use large copper area)
  2. Gate driver should provide sufficient current (>2A)
  3. Decoupling capacitors needed near device
  4. ESD protection recommended for gate

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TPH1R403NL N-Channel MOS MOSFET 30V 150A DFN5x6 EGP 55.000
Out of stock