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3DU5C Metal Encapsulated Silicon Phototransistor 0.5-1mA 880nM 10V

3DU5C Metal Encapsulated Silicon Phototransistor 0.5-1mA 880nM 10V

Product Features

  • Product Name : NPN Silicon Phototransistor;Model : 3DU5C
  • Working Voltage(Max.) : 10V;Reverse Breakdown Voltage : 15V;Dark Current : 0.3uA
  • Photocurrent : 0.5-1mA;Power Consumption : 30mW;Peak Wavelength : 880nM
  • Body Size : 7 x 5mm/ 0.28" x 0.2"(L*D);Total Length : 28mm/ 1.1";External Material : Metal
  • Weight : 3g;Package Content : 1 x NPN SiliconPhototransistor
 
 

Product Description

 

  • Widely used in all kinds of electric circuits.
  • In unlicensed shot is, by light activated triode, no electrical signal output.
  • When the signal light illuminate its base (window) by light, the light activated triode conduction, from the emitter or collector output electrical signal after amplification.
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3DU5C Metal Encapsulated Silicon Phototransistor 0.5-1mA 880nM 10V
  • Shobra Branch : 10
  • Heliopolis Branch : 6
  • Stock: 16
  • Brand: Chinese
  • Model: 3DU5C Phototransistor
  • Weight: 0.03kg
  • SKU: D22-24
  • UPC: WELL
  • Location: G2-16
Product Views: 1837
10.00EGP