AT45DB081E Data Nor SPI Flash Memory 8Mbit SOIC-8 pin 3.3V

Out of stock
EGP 95.000
Out of stock
Brand:Chinese

Description

Features:

  • Single 2.3V – 3.6V supply
  • Serial Peripheral Interface (SPI) compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation
  • Continuous read capability through entire array Up to 85MHz
  • Low-power read option up to 15MHz
  • Clock-to-output time (tV ) of 6ns maximum U
  • ser configurable page size
  • 512 bytes per page
  • 528 bytes per page (default)
  • Page size can be factory pre-configured for 512 bytes
  • Two fully independent SRAM data buffers (512/528 bytes)
  • Flexible programming options
  • Byte/Page Program (1 to 512/528 bytes) directly into main memory
  • Buffer Write
  • Buffer to Main Memory Page Program
  • Flexible erase options
  • Page Erase (512/528 bytes)
  • Block Erase (4 KB)
  • Sector Erase (64 KB)
  • Chip Erase (32 Mbits)
  • Program and Erase Suspend/Resume
  • Advanced hardware and software data protection features
  • Individual sector protection
  • Individual sector lock-down to make any sector permanently read-only
  • 128-byte, One-Time Programmable (OTP) Security Register
  • 64 bytes factory programmed with a unique identifier
  • 64 bytes user programmable
  • Hardware and software controlled reset options
  • JEDEC Standard Manufacturer and Device ID Read
  • Low-power dissipation
  • 400nA Ultra-Deep Power-Down current (typical)
  • 3µA Deep Power-Down current (typical)
  • 25µA Standby current (typical)
  • 7mA Active Read current (typical)
  • Endurance: 100,000 program/erase cycles per page minimum
  • Data retention: 20 years
  • Green (Pb/Halide-free/RoHS compliant)
  • packaging options 8-lead SOIC (0.208″ wide)
  • Datasheet

Additional information

Weight 0.051 kg

Brand

Chinese

Chinese
Chinese

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