FMMT619 50V 2A NPN transistor transistor SOT-23

Description

FMMT619 50V 2A NPN transistor transistor SOT-23

Product Description

The FMMT619 is a low-saturation NPN silicon transistor in a compact SOT-23 package. It supports up to 50 V and 2 A continuous collector current, making it suitable for switching and amplification in space-constrained designs. With very low saturation voltage and high gain, it provides efficient performance in power-sensitive and high-frequency applications.

Key Features

• NPN silicon transistor (low saturation type)

• Collector-Emitter Voltage (VCEO): 50 V

• Collector-Base Voltage (VCBO): 50 V

• Emitter-Base Voltage (VEBO): 5 V

• Continuous Collector Current (IC): 2 A

• Peak Collector Current (ICM): up to 6 A (pulsed)

• Power Dissipation: 625 mW (on standard PCB)

• Very low VCE(sat): ~200 mV at 2 A

• High DC gain (hFE): 100 to 300 depending on operating point

• Transition frequency (fT): up to 165 MHz

• Operating temperature range: –55 °C to +150 °C

• Package: SOT-23 (surface-mount)

Applications

• High-efficiency switching circuits

• DC–DC converters and power regulation

• Load drivers and relay replacements

• Signal amplification in compact electronics

• Battery-powered equipment

• General-purpose low-voltage switching