IRF7404TRPBF P-Channel MOSFET 6.7 A 20 V SOP8

Description

IRF7404TRPBF P-Channel MOSFET 6.7 A 20 V SOP8

Product Description

The IRF7404TRPBF is a P-channel power MOSFET in an 8-pin SOIC (SO-8) surface-mount package. It belongs to Infineon’s HEXFET® series, designed for efficient switching applications. It supports moderate current at low voltages, making it useful for load switching, power rails, and battery-powered circuits.

Key Features

• P-channel MOSFET

• Drain-Source Voltage (VDS): 20 V

• Continuous Drain Current (ID): 6.7 A (at ambient conditions)

• On-state Resistance (RDS(on)): 40 mΩ (max) under gate drive

• Gate Charge (Qg): ~ 50 nC (at VGS = 4.5 V)

• Input Capacitance (Ciss): ~ 1500 pF

• Gate Source Threshold Voltage (VGS(th)): up to ~0.7 V

• Maximum Power Dissipation: 2.5 W (ambient)

• Turn-on delay: ~14 ns

• Turn-off delay: ~100 ns

• Operating Temperature Range: –55 °C to +150 °C (junction)

• Package: SOIC-8 (Surface Mount)

• RoHS compliant / lead-free

Applications

• P-channel load switching (e.g. high-side switches)

• Battery management circuits

• Power path control in portable devices

• Reverse polarity protection

• DC-DC converter circuits

• General power switching tasks in low-voltage systems