LMBT3904DW1T1G dual NPN general purpose transistor SOT‑363

Description

LMBT3904DW1T1G dual NPN general purpose transistor SOT‑363

Key Features

• Dual NPN transistors in a compact SC‑88 (SOT‑363) 6-pin SMD package

• Low saturation voltage: Vₙₑₜ₍sat₎ ≤ 0.4 V

• High DC current gain (h_FE): 100 – 300

• Inputs: RoHS‑compliant, halogen-free

⚡ Electrical Ratings (Tₐ = 25 °C)

• V_CE(off) (Collector‑Emitter Breakdown): ≥ 40 V

• V_CBO (Collector‑Base): ≥ 60 V

• V_EBO (Emitter‑Base): ≥ 6 V

• Collector Current (I_C): max 200 mA

• Power Dissipation (P_D): 150 mW (FR‑4 PCB)

🔧 Performance & Switching

• **Current Gain (h_FE):**
  • At I_C = 10 mA: 100 – 300
  • At I_C = 50 mA: ~60

• Saturation Voltages:
  • V_CE(sat) @ I_C=10 mA, I_B=1 mA: ≤ 0.2 V
  • V_BE(sat) @ same conditions: ≤ 0.65 V

• Transition Frequency (f_T): ≥ 300 MHz

• Switching Times (typical): t_d, t_r ≤ 35 ns; t_s ≤ 200 ns; t_f ≤ 50 ns

🧊 Temperature & Environmental

• Operating Temperature (Junction & Storage): –55 °C to +150 °C

• Thermal Resistance (J‑to‑A): ~833 °C/W

📏 Package Dimensions

• Package: SOT‑363 / SC‑88

• Pin Configuration: Dual-packaged; typical lead finish

⚙️ Applications

• Low-power amplifiers

• Signal switching

• General-purpose discrete circuits in space-critical applications

🔍 Summary

This compact twin-transistor is ideal for low-power signal amplification and switching in space-constrained surface-mount designs.