STP12NM50 N-Channel Mosfet 550V 12A TO220

Description

STP12NM50 – N-Channel Power MOSFET (500 V / 12 A / TO-220)

Key Features

• Type: N-channel MOSFET, enhancement-mode, MDmesh™ power MOSFET from STMicroelectronics.

• Drain-Source Voltage (V_DS): 500 V (breakdown)

• Continuous Drain Current (I_D): 12 A at T_C = 25 °C

• Pulsed Drain Current (I_DM): 48 A (pulse)

• Drain-Source On-Resistance (R_DS(on)): ≤ 0.350 Ω (at V_GS = 10 V, ID ~6 A)

• Gate-Source Voltage (V_GS): ± 30 V max.

• Power Dissipation (P_D): 160 W (at T_C = 25 °C)

• Junction / Storage Temperature Range: –65 °C to +150 °C (junction)

• Package: TO-220 (through-hole), also available in D²PAK / TO-220FP variants.

• Technology: MDmesh™ — designed for low on-resistance, high dv/dt tolerance, and robust avalanche energy handling.

Additional Characteristics

• Avalanche-rated: 100% avalanche tested; good avalanche robustness — useful in inductive switching environments.

• Low input capacitance and gate charge: Enables faster switching when gate drive is appropriate.

• Low gate input resistance: Simplifies gate drive design.

• Good dynamic performance: Thanks to ST’s “PowerMESH” layout, the MOSFET is suited for switching applications (SMPS, motor control, etc.) requiring both voltage and current robustness.

Suitable Applications

• Power supplies and switching regulators (AC-DC, DC-DC)

• Motor drivers and controllers (brush DC motors, small BLDC, solenoids)

• AC mains or high-voltage switching (due to 500 V rating)

• Inductive loads and loads with transients — thanks to high avalanche energy rating

• General-purpose high-voltage/high-power switching in industrial or consumer electronics