Description
STP5NK52ZD Specifications:
- Type: N-Channel Power MOSFET
- Model: STP5NK52ZD
- Package: TO-220
- Drain-Source Voltage (Vds): 520V
- Continuous Drain Current (Id): 4.5A (at 25°C)
- Pulsed Drain Current (Id): 18A
- Gate-Source Voltage (Vgs): ±30V
- Drain-Source On-State Resistance (Rds(on)): 1.8Ω (typical) at Vgs = 10V, Id = 2.25A
- Gate Charge (Qg): 28nC (typical) at Vgs = 10V
- Threshold Voltage (Vgs(th)): 2V – 4V
- Total Power Dissipation (Ptot): 45W
- Input Capacitance (Ciss): 550pF (typical) at Vds = 25V, Vgs = 0V
- Output Capacitance (Coss): 70pF (typical) at Vds = 25V, Vgs = 0V
- Reverse Transfer Capacitance (Crss): 10pF (typical) at Vds = 25V, Vgs = 0V
- Operating Temperature Range (Tj): -55°C to +150°C
- Maximum Junction Temperature (Tj max): +150°C
- Datasheet
Features:
- High Voltage Capability: Withstands up to 520V, suitable for high-voltage applications.
- Moderate On-State Resistance: 1.8Ω typical Rds(on) ensures efficient switching with low power loss.
- Fast Switching: Low gate charge and capacitance for high-speed operation.
- Robust Design: ±30V gate-source voltage tolerance and strong thermal performance.
- High Current Handling: Supports continuous drain current of 4.5A and pulsed drain current up to 18A.
Applications:
- Power supplies and converters
- Motor control circuits
- Lighting applications
- DC-DC converters
- High voltage switching applications
Ensure to handle and design circuits with the STP5NK52ZD according to the manufacturer’s guidelines to achieve optimal performance and reliability.
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