Description
BPW34S Silicon PIN Photodiode
Key Features
- Silicon PIN photodiode
- High photosensitivity
- High radiant sensitivity
- Suitable for visible and near-infrared light
- Fast response
- Peak sensitivity around 900 nm
- Spectral range: 430–1100 nm
- Large 7.5 mm² photosensitive area
- Wide ±65° half-sensitivity angle
- Clear plastic package
- Suitable for high-speed photodetection applications
Technical Specifications
| Parameter |
Specification |
| Part Number |
BPW34S |
| Device Type |
Silicon PIN Photodiode |
| Manufacturer |
Vishay |
| Spectral Range |
430–1100 nm |
| Peak Wavelength |
900 nm |
| Photosensitive Area |
7.5 mm² |
| Half-Sensitivity Angle |
±65° |
| Reverse Voltage |
60 V max. |
| Dark Current |
2 nA typ. / 30 nA max. |
| Junction Capacitance |
70 pF typ. @ 0 V |
| Junction Capacitance |
25 pF typ. / 40 pF max. @ 3 V |
| Rise Time |
100 ns typ. |
| Fall Time |
100 ns typ. |
| Operating Temperature |
−40 to +100°C |
| Storage Temperature |
−40 to +100°C |
| Power Dissipation |
215 mW @ 25°C |
| Package |
2-pin leaded, top-view |
The Vishay BPW34S has the same electrical specifications as BPW34; the S suffix primarily identifies the tube packaging, according to Vishay’s ordering information.
Applications
- Infrared detection
- Optical sensors
- Light measurement
- IR communication receivers
- Encoder and position sensing
- Smoke and flame detection
- High-speed optical detection
- DIY solar/light sensing experiments
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