IGBT Toshiba MG200Q2YS40 200A 1200V

Model: IGBT Toshiba MG200Q2YS40 200A 1200V
SKU: IGBT-Toshiba-MG200Q2YS40-200A-1200V
Out of stock
EGP 4,845.000
Out of stock
SKU: IGBT-Toshiba-MG200Q2YS40-200A-1200V Categories: , Tags: , ,
Brand:Toshiba

Description

IGBT Toshiba MG200Q2YS40

APPLICATIONS

– HIGH POWER SWITCHING APPLICATIONS.

– MOTOR CONTROL APPLICATIONS.

This Toshiba IGBT MG200Q2YS40 Module Has the following characteristics

  • High  Input Impedance
  • High Speed     tf=0.5µs (Max.)   trr=0.5µs (Max.)
  •  Low Saturation Voltage    VCE (sat) = 4.0V (Max.)
  • Enhancement-Mode
  • Includes a Complete Half Bridge in One Package.
  • The Electrodes are Isolated from Case.

– Weight: 430g

 IGBT MG200Q2YS40 Module ELECTRICAL CHARACTERISTICS at 25 degrees

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Emitter Voltage

VcES

1200

V

Gate-Emitter Voltage

VGES

±20

V

 

Collector Current

DC

Ic

200

 

A

lms

Icp

400

Forward Current

DC

IF

200

 

A

lms

IFM

400

Collector Power Dissipation (Tc= 25°C)

Pc

1300

w

Junction Temperature

Tj

150

oc

Storage Temperature Range

Tstg

-40-125

oc

Isolation Voltage

V1sol

2500 (AC 1 minute)

V

Screw Torque (Terminal/ Mounting)

3/3

N·m

Additional information

Weight 430 kg

Brand

Toshiba

Reviews

There are no reviews yet.

Be the first to review “IGBT Toshiba MG200Q2YS40 200A 1200V”
IGBT Toshiba MG200Q2YS40 200A 1200V
IGBT Toshiba MG200Q2YS40 200A 1200V EGP 4,845.000
Out of stock