MIP0223SY high breakdown voltage power MOS FET with built in CMOS control circuits

Description

MIP0223SY high breakdown voltage power MOS FET with built in CMOS control circuits

Panasonic MIP0223SY (Intelligent Power Device)
Based on the Panasonic Semiconductor datasheets , this is a high-voltage switching regulator IC, not a standalone MOSFET.

1. General Description & Features

• Part Type: Panasonic Intelligent Power Device (IPD), Silicon MOS IC .

• Core Architecture: Single chip IC integrating a high breakdown voltage power MOS FET and CMOS control circuits .

• Primary Function: Off-line switching power supply controller.

• Key Features:

  • Universal Mains Input: AC 85V to 274V .

  • Integrated Protection: Pulse-by-pulse overcurrent protection and timer auto-restart circuit .

  • Typical Application Power: Switching power supplies up to 90W .

2. Absolute Maximum Ratings (Ta = 25°C)

3. Pin Configuration & Package

• Package: TO-220 Type (3 pins) .

• Pinout:

  1. Control (CMOS logic input/feedback)

  2. Source (Ground/power return)

  3. Drain (High-voltage connection to transformer)

• EIAJ Standard: SC-46 .

4. Electrical Characteristics (Ta = 25°C)

• Oscillator Frequency: 100 kHz (typ) [90-110 kHz range].

• Maximum Duty Cycle: 67% (typ).

• ON-State Resistance (R_DS(on)): 6.7 Ω (Typ) @ I_D = 0.3A.

• Self Protection Current Limit (I_LIMIT): 1.15 A (Typ).

• Breakdown Voltage (V_DSS): 700 V (Min).