MC33152DR2G dual non inverting high speed Mosfet Gate driver SOP8

Model: MC33152DR2G
SKU: XD9-11-MC33152DR2G
Out of stock
EGP 131.100
Out of stock
SKU: XD9-11-MC33152DR2G Category:

MC33152DR2G dual non inverting high speed Mosfet Gate driver SOP8

Key Specifications:

  • Supply Voltage Range: 6.1V to 18V
  • Peak Output Current: 1.5A
  • Propagation Delay: 36ns
  • Rise Time: 32ns
  • Input Threshold Voltage: 1.67V with 170mV hysteresis
  • Operating Temperature Range: -40°C to 85°C
  • Package Type: SOIC-8

Description

MC33152DR2G dual non inverting high speed Mosfet Gate driver SOP8

The MC33152DR2G is a high-speed dual non-inverting MOSFET driver designed to interface low-current digital signals with power MOSFETs. Manufactured by ON Semiconductor, this device is suitable for applications requiring rapid switching and efficient driving of capacitive loads.

Key Specifications:

  • Supply Voltage Range: 6.1V to 18V
  • Peak Output Current: 1.5A
  • Propagation Delay: 36ns
  • Rise Time: 32ns
  • Input Threshold Voltage: 1.67V with 170mV hysteresis
  • Operating Temperature Range: -40°C to 85°C
  • Package Type: SOIC-8

Features:

  • Dual non-inverting drivers
  • CMOS/LSTTL logic compatible inputs
  • High current totem pole outputs
  • Fast switching speeds
  • Low input current

Applications:

  • Driving power MOSFETs in high-speed switching applications
  • Motor control
  • Switch-mode power supplies
  • Pulse transformer drivers
  • Line drivers

For detailed information, please refer to the MC33152 datasheet.

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MC33152DR2G
MC33152DR2G dual non inverting high speed Mosfet Gate driver SOP8 EGP 131.100
Out of stock